Thermal sensing capability and current–voltage–temperature characteristics in Pt/<i>n</i>-GaP/Al/Ti Schottky diodes

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experimental data is made by a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structures. Numerical simula...

Graphene-silicon Schottky diodes.

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)

Electrothermal Model of SiC Power Schottky Diodes

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...

Junction investigation of graphene/silicon Schottky diodes

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed bet...